EFFICIENCY ENHANCEMENT OF AMORPHOUS SILICON p-i-n SOLAR CELLS BY LP-CV
نویسنده
چکیده
Amorphous silicon p-i-n solar cells were deposited on “in house” developed LP-CVD zinc oxide and compared with commercially available SnOa (Asahi type U2) substrates. While for both front TCO materials comparably high values of the open circuit voltage (860900 mV) and of the fill factor (72 74 %) were obtained, a remarkable enhancement of the short-circuit current density could be observed for LP-CVD ZnO substrates. Optical characterizations confirm for LP-CVD ZnO a more efficient light-trapping effect, as compared to SnOa. By applying this low-cost LP-CVD ZnO, a stabilized a-Si:H p-i-n solar cell efficiency of 9 % has been achieved.
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تاریخ انتشار 2001